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5mm Large Area InGaAs PIN Photodiode Diameter

5mm Large Area InGaAs PIN Photodiode Diameter

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Description

Description

Large area, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 5mm in diameter. Planar-passivated device structure.Photosensitive surfaces are broadband AR coated.We use high transmission Glass window material.

Features

¡ñ Top illumination planar PD
¡ñ Lager active diameter
¡ñ Less than 5ns response time,High reliability

ABSOLUTE MAXIMUM RATINGS (T=25°C)

Parameter

Rating

Units

Operating voltage

15

V

Forward current

10

mA

Operating temperature

-50¡«+100

¡æ

storage temperature

-55¡«+125

¡æ

Power dissipation

100

mW

Soldering temperature

260¡æ

¡æ

Soldering time

10

S

OPTICAL AND ELECTRICAL CHARACTERISTICS (T=25°C) 

Parameters

Sym

Test conditions

Min

Typ

Max

Unit

Response Spectrum

λ

-

900-1700

nm

Active diameter

φ

-

5000

μm

Reponsivity

Re

VR=5V,λ=1.31μm,φe=10μm

0.85

A/W

VR=5V,λ=1.55μm,φe=10μm

0.90

Max linear power

φs

VR=5V,λ=1.55μm

10

mW

Response time

ts

VR=5V,RL=50Ω,f=1MHz

3

5

ns

Total capacitance

C

VR=5V,f=1MHz

40

60

pF

Dark current

ID

VR=5V,φe=0

1

5

nA

Shunt impedance

Rsh

VR=10mV

75

Reverse breakdown voltage

VBR

IR=10μA

40

V

Applications

¡ñ Space communication,
¡ñ Laser fusee,
¡ñ Alarming

 

 

 

 

Important Notice

Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.

The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.

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