Description
Large area, high sensitivity photo-diode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 5mm in diameter. Planar-passivated device structure.Photosensitive surfaces are broadband AR coated.We use high transmission Glass window material.
Features
¡ñ Top illumination planar PD
¡ñ Lager active diameter
¡ñ Less than 5ns response time,High reliability
ABSOLUTE MAXIMUM RATINGS (T=25°C)
Parameter |
Rating |
Units |
Operating voltage |
15 |
V |
Forward current |
10 |
mA |
Operating temperature |
-50¡«+100 |
¡æ |
storage temperature |
-55¡«+125 |
¡æ |
Power dissipation |
100 |
mW |
Soldering temperature |
260¡æ |
¡æ |
Soldering time |
10 |
S |
OPTICAL AND ELECTRICAL CHARACTERISTICS (T=25°C)
Parameters |
Sym |
Test conditions |
Min |
Typ |
Max |
Unit |
Response Spectrum |
λ |
- |
900-1700 |
nm |
||
Active diameter |
φ |
- |
5000 |
μm |
||
Reponsivity |
Re |
VR=5V,λ=1.31μm,φe=10μm |
0.85 |
|
|
A/W |
VR=5V,λ=1.55μm,φe=10μm |
0.90 |
|
|
|||
Max linear power |
φs |
VR=5V,λ=1.55μm |
10 |
|
|
mW |
Response time |
ts |
VR=5V,RL=50Ω,f=1MHz |
|
3 |
5 |
ns |
Total capacitance |
C |
VR=5V,f=1MHz |
|
40 |
60 |
pF |
Dark current |
ID |
VR=5V,φe=0 |
|
1 |
5 |
nA |
Shunt impedance |
Rsh |
VR=10mV |
75 |
|
|
MΩ |
Reverse breakdown voltage |
VBR |
IR=10μA |
40 |
|
|
V |
Applications
¡ñ Space communication,
¡ñ Laser fusee,
¡ñ Alarming
Important Notice
Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.