The WDM combo BOSA double laser features a bidirectional transmission which is ideal for use in light source detection, OTDR systems, and other analog transmission systems. We use FP, DFP, and CWDM bidirectional lasers according to customer requirements. This laser features a low noise and high isolation with an output power range of 1 to 4mw.
Absolute Maximum Ratings
| Parameter | Symbol | Min. | Type. | Max. | Unit |
| Reverse voltage(LD) | Vrl | - | - | 2 | V |
| Forward Current (LD) | LfL | - | - | 150 | mA |
| Reverse voltage (monitor) | Vrl | - | - | 15 | V |
| Reverse Current (monitor) | Lrp | - | - | 2 | mA |
| Soldering Temperature(< 10sec.) | Stemp | - | - | 260 | ℃ |
| Storage Temperature | Tstg | -40 | - | 85 | ℃ |
| Operating Temperature | Top | -20 | - | 80 | ℃ |
Optical & Electrical Characteristics
| Parameter | Symbol | Min | Typical | Max | Unit | Notes |
| 1310nm FP Laser | ||||||
| Output Power | Po | 1 | 2 | mW | CW,If=Ith+20mA | |
| Slope Efficiency | SE | 0.05 | mW/mA | |||
| Threshold Current | Ith | 10 | 15 | mA | CW | |
| Operating Current | If | 30 | 40 | mA | CW | |
| Operating Voltage | Vf | 1.2 | 1.5 | V | CW | |
| Monitor Current | Im | 100 | 900 | uA | Vrd=5V, If=Ith+20mA | |
| Monitor Dark Current | Id | 0.5 | 1 | nA | Vrd=5V | |
| Cent Wavelength | λc | 1300 | 1310 | 1320 | nm | CW, If=Ith+20mA |
| Spectral Width | Δλ | 4 | nm | -3dB | ||
| Spectral Shift | Δλ/ΔT | 0.1 | nm/℃ | CW, If=Ith+20mA | ||
| Tracking Error | TE | -1.5 | 1.5 | dB | Im=const, TE=10log(P/2.0) | |
| Return loss | ER | 40 | 45 | dB | CW | |
| Isolation | ISO | 30 | 35 | dB | Single Stage | |
| 1490nm DFB Laser | ||||||
| Output Power | Po | 1 | 2 | mW | CW,If=Ith+20mA | |
| Slope Efficiency | SE | 0.05 | mW/mA | |||
| Threshold Current | Ith | 10 | 15 | mA | CW | |
| Operating Current | If | 30 | 40 | mA | CW | |
| Operating Voltage | Vf | 1.2 | 1.5 | V | CW | |
| Monitor Current | Im | 100 | 900 | uA | Vrd=5V, If=Ith+20mA | |
| Monitor Dark Current | Id | 0.5 | 1 | nA | Vrd=5V | |
| Cent Wavelength | λc | 1480 | 1490 | 1550 | nm | CW, If=Ith+20mA |
| Spectral Width | Δλ | 0.2 | 1 | nm | -20dB | |
| Side-Mode Suppression Ratio | SMSR | 35 | dB | Po=2mW, | ||
| Spectral Shift | Δλ/ΔT | 0.1 | nm/℃ | CW, If=Ith+20mA | ||
| Tracking Error | TE | -1.5 | 1.5 | dB | Im=const, TE=10log(P/2.0) | |
| Return loss | ER | 40 | 45 | dB | CW | |
| Isolation | ISO | 30 | 35 | dB | Single Stage | |
| 1550nm FP Laser | ||||||
| Output Power | Po | 1 | 2 | mW | CW,If=Ith+20mA | |
| Slope Efficiency | SE | 0.05 | mW/mA | |||
| Threshold Current | Ith | 10 | 15 | mA | CW | |
| Operating Current | If | 30 | 40 | mA | CW | |
| Operating Voltage | Vf | 1.2 | 1.5 | V | CW | |
| Monitor Current | Im | 100 | 900 | uA | Vrd=5V, If=Ith+20mA | |
| Monitor Dark Current | Id | 0.5 | 1 | nA | Vrd=5V | |
| Cent Wavelength | λc | 1540 | 1550 | 1560 | nm | CW, If=Ith+20mA |
| Spectral Width | Δλ | 4 | nm | -3dB | ||
| Spectral Shift | Δλ/ΔT | 0.1 | nm/℃ | CW, If=Ith+20mA | ||
| Tracking Error | TE | -1.5 | 1.5 | dB | Im=const, TE=10log(P/2.0) | |
| Return loss | ER | 40 | 45 | dB | CW | |
| Isolation | ISO | 30 | 35 | dB | Single Stage | |
Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.
The APD/avalanche photo diode (3G InGaAs pulse APD diode pins for OTDR) is a p-n junction photodetector made of silicon or germanium.By applying a reverse bias voltage to the p-n junction,the incident light photons will strike the electrons in order to push them through a junction,thus achieving photoelectric current flows.When the applied reverse voltage increases,an avalanche current flow will occur.The avalanche effect of the current carrier is then used to amplify the photoelectric signal in the detection system in order to improve detector sensitivity.
This photo diode series features a small dark current, low operating voltage, and high sensitivity.It can operate in the pulse output mode or DC output mode, and is often used in OTDR systems and detection equipment for Raman backscattering systems.
The 0.2-2mw 1310nm FP pigtailed laser diode module plug in type is provided in a coaxial plug-in package. It also uses a Fabry–Pérot cavity,which means it features a low threshold and operating current.In addition, the device can be supplied with an SC,ST,or FC connector. It is commonly used in handheld and desktop light sources,optical multi-meters, and communication test equipment.
The large area of the InGaAs PD/photodiode pin for instrumentation features an InGaAs large area detector chip with a long wavelength, giving it a small dark current,a low power consumption,high sensitivity, small volume, and diverse structural designs.It also features a replaceable structure,allowing most fiber optic connector types to be compatible,and thus, facilitate maintenance and use.This product series is most often used in power detection equipment,hand held power meters, desktop power meters and optical multi-meters.
The 1100nm-1650nm small area InGaAs photodiode uses an InGaAs detector chip,and features a low power consumption,small dark current, high sensitivity,great linearity, compact design and small volume.The equipment is most commonly used in CATV receivers,power detection equipment and optical signal receivers for analog systems.
One end of the Tx CWDM Rx 1550nm BOSA is a CWDM laser, which is used to transmit signals, and the other end is an InGaAs detector, which is used to receive signals. The packaging form for this BOSA is a pigtailed package type, which makes it ideal for use in optical communication systems. Length and connector types can be customized according to customer requirements.
One end of the 1310nm FP TX 1550nm RX SC BOSA is a DFB or FP laser, which is used to transmit signals. The other end is an InGaAs detector, which is used to receive signals. The packaging is a receptacle package, which makes this BOSA ideal for use in SONET, SDH, ATM and other fields. The laser can be used in different chips and connectors based on customer requirements.